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STMicroelectronics STGWT60H65DFB

STGWT60H65DFB IGBT 650V 80A TO-3P, Trench Field Stop

MPNSTGWT60H65DFB
End of Life

STMicroelectronics Trench Field Stop IGBT, STGWT60H65DFB, 650 V Vces, 80 A Ic, 375 W, TO-3P-3 through-hole package, -55°C to 175°C.

$4.67Ref. price · indicative, final on quote
STMicroelectronics STGWT60H65DFB datasheet (PDF)
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGWT60H65DFB specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)80 A
Current - collector pulsed240 A
Power - max375 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge306 nC
CaseTO-3P-3, SC-65-3
Test condition400V, 60A, 5Ohm, 15V
Switching energy1.09mJ (on), 626µJ (off)
Td (on/off) @ 25°C51ns/160ns
Vce(on) (Max) @ vge, ic2V @ 15V, 60A
Reverse recovery time60 ns

Product details

650 V, 80 A Trench Field Stop IGBT in TO-3P

The STMicroelectronics STGWT60H65DFB is a 650 V, 80 A Trench Field Stop IGBT in a TO-3P-3 through-hole package. It targets hard-switching applications such as motor drives, inverters, and power supplies where conduction and switching losses drive the thermal design.

Conduction and switching losses at 60 A

The switching energy at 400 V, 60 A, with a 5 Ω gate resistor measures 1.09 mJ during turn-on and 626 µJ during turn-off, giving a total per-cycle loss that drives the heatsink requirement in a hard-switched converter. Gate charge is 306 nC total.

Junction temperature range is -55°C to 175°C, exceeding the typical industrial 150°C ceiling. This headroom matters for motor-drive or inverter designs where the IGBT sits near the heatsink in a sealed enclosure. The TO-3P-3 package (also known as SC-65-3) has a large copper tab for bolt-down heatsink mounting — the thermal interface material and mounting torque directly affect the junction-to-case thermal resistance.

Frequently asked questions

What is the Vce(sat) of STGWT60H65DFB?

Vce(on) is 2 V typical at 15 V gate drive and 60 A collector current.

What is the gate charge of STGWT60H65DFB?

Total gate charge is 306 nC.

What is the closest functional equivalent to STGWT60H65DFB?

The STGWT60H65FB is a near-identical sibling with the same package, current rating, and switching energy, but its Vce(on) is 2.3 V at 15 V, 60 A — 0.3 V higher than the DFB variant. The DFB offers lower conduction loss for the same operating point.