650 V, 80 A Trench Field Stop IGBT in TO-3P
The STGWT40H65DFB is a 650 V, 80 A Trench Field Stop IGBT from STMicroelectronics in a TO-3P through-hole package. It is designed for medium-frequency hard-switching applications such as motor drives, inverters, and PFC stages where low conduction loss and fast switching are both required. The Trench Field Stop structure delivers a low saturation voltage of 2 V at 40 A and 15 V gate drive, which directly reduces conduction losses in the on-state. The co-packaged diode has a 62 ns reverse recovery time, helping to contain turn-on losses in bridge topologies.
Switching losses and gate drive budget
Total gate charge is 210 nC. The 498 µJ turn-on and 363 µJ turn-off energy at 400 V, 40 A, 5 Ω gate resistor define the switching loss contribution to the thermal budget. Turn-on delay is 40 ns and turn-off delay is 142 ns at 25 °C; these numbers set the minimum dead-time in a half-bridge leg to avoid shoot-through. The 160 A pulsed collector current rating gives headroom for inrush and fault conditions.
Thermal and environmental range
Maximum power dissipation is 283 W, but the real thermal limit depends on the heatsink and the RthJC of the TO-3P package.