Trench field-stop IGBT with co-pack diode — 650 V, 80 A continuous
The STGWA50M65DF2 is a 650 V, 80 A trench field-stop IGBT from STMicroelectronics' M series, housed in a through-hole TO-247 long-leads package. It integrates a co-packaged freewheeling diode with a 162 ns reverse recovery time, making it a complete switch for hard-switched bridge legs.
Conduction and switching losses — the numbers that drive the heatsink
At 25°C junction, the typical Vce(on) is 2.1 V at 15 V gate drive and 50 A collector current — this is the conduction loss floor for a 50 A load. The 150 nC total gate charge means a driver sourcing 1 A can switch the gate in 150 ns, though the datasheet turn-on delay of 42 ns and turn-off delay of 130 ns set the practical dead-time floor. Switching energy at 400 V bus, 50 A, 6.8 Ω gate resistor, 15 V drive is 880 µJ turn-on and 1.57 mJ turn-off. At a 20 kHz switching frequency, the total switching loss is about 49 W — the designer must budget this against the 375 W maximum power dissipation and the thermal impedance of the TO-247 package. The co-pack diode's 162 ns trr is fast enough for most 10–30 kHz hard-switched topologies; above that, a separate fast-recovery diode may be needed to keep turn-on loss within budget.
Package, mounting, and lifecycle
The long-lead variant provides extra lead length for thicker heatsinks or insulated mounting hardware.