1200 V, 14 A — where this IGBT sits in the power stack
The STGP3NC120HD is a 1200 V, 14 A IGBT from ST's PowerMESH™ family, in a TO-220-3 through-hole package. That 1200 V collector-emitter breakdown puts it squarely into 3-phase rectified mains applications — 400 VAC drives, UPS inverters, and welding machines — where the DC bus sits around 560 V and you need headroom for transients.
Conduction and switching — the numbers that matter for the thermal budget
That 2.8 V is the conduction loss floor at the test current — at 14 A the drop will be higher, so budget for it in the heatsink calculation. Gate charge is 24 nC, low enough that a standard totem-pole gate driver IC can switch it into the tens of kHz without excessive drive power. Switching energy is 236 µJ turn-on and 290 µJ turn-off at 800 V, 3 A, with a 10 Ω gate resistor and 15 V gate drive. At 20 kHz switching, those losses add about 10.5 W to the dissipation — the 75 W package limit leaves headroom for conduction losses on top, but the TO-220 needs a heatsink in any continuous-switching application. The internal diode has a reverse recovery time of 51 ns, which helps keep the turn-on loss of the complementary IGBT in a half-bridge in check.