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STMicroelectronics STGP30H60DFB

STGP30H60DFB IGBT, 600 V, 60 A, Trench Field Stop, TO-220

MPNSTGP30H60DFB
End of Life

STMicroelectronics STGP30H60DFB Trench Field Stop IGBT, 600 V Vces, 60 A Ic, 2 V Vce(on) at 15 V / 30 A, 149 nC gate charge, 260 W max power, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$2.94Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGP30H60DFB specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)60 A
Current - collector pulsed120 A
Power - max260 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge149 nC
CaseTO-220-3
Test condition400V, 30A, 10Ohm, 15V
Switching energy383µJ (on), 293µJ (off)
Td (on/off) @ 25°C37ns/146ns
Vce(on) (Max) @ vge, ic2V @ 15V, 30A
Reverse recovery time53 ns

Product details

600 V / 60 A — motor-drive and power-supply IGBT

The STGP30H60DFB is a Trench Field Stop IGBT from STMicroelectronics rated at 600 V collector-emitter breakdown and 60 A continuous collector current, with a pulsed current capability of 120 A. The 2 V typical Vce(on) at 15 V gate drive and 30 A collector current sets the conduction loss floor for a 260 W maximum power dissipation in the TO-220 package. The Trench Field Stop structure delivers a low saturation voltage and fast switching — 383 µJ turn-on energy and 293 µJ turn-off energy tested at 400 V, 30 A, 10 Ω gate resistor, 15 V gate drive. This combination suits hard-switching topologies in motor drives, uninterruptible power supplies, and welding inverters where efficiency and thermal margin are tight.

Switching and thermal headroom

Gate charge totals 149 nC, which determines the drive current required from the gate driver at the target switching frequency — a 149 nC gate at 20 kHz draws roughly 3 mA average from the driver, well within the SOA of most standard IGBT gate-driver ICs. The 37 ns turn-on delay and 146 ns turn-off delay at 25 °C give the timing budget for dead-time insertion in half-bridge stages. The reverse recovery time of the co-packaged diode is 53 ns, which reduces the turn-on loss contribution from the freewheeling diode recovery.

Frequently asked questions

What is the Vce(sat) of STGP30H60DFB?

The maximum Vce(on) is 2 V at 15 V gate drive and 30 A collector current. This is the conduction loss figure used for thermal design at rated current.

Is STGP30H60DFB RoHS compliant?

Yes, the STGP30H60DFB is ROHS3 compliant.