600 V, 25 A PowerMESH™ IGBT in TO-220
The STGP14NC60KD is an STMicroelectronics PowerMESH™ IGBT rated for 600 V collector-emitter breakdown and 25 A continuous collector current, housed in a TO-220-3 through-hole package. It targets hard-switching applications such as motor drives, power inverters, and induction heating where a robust switching characteristic and low conduction loss are required.
Switching and drive parameters
Gate charge is 34.4 nC — this sets the drive current needed from the gate driver for a given switching frequency. Switching energy is 82 µJ (turn-on) and 155 µJ (turn-off) under test conditions of 390 V, 7 A, 10 Ω gate resistor, and 15 V gate drive. Turn-on and turn-off delay times are 22.5 ns and 116 ns respectively at 25°C, giving a clean switching edge that reduces dead-time margin requirements in complementary half-bridge designs.
Thermal and ruggedness ratings
The wide temperature grade suits industrial environments where the IGBT may be mounted near a motor or in a non-conditioned cabinet; derate the power above 25°C case temperature per the datasheet curve. Pulsed collector current capability is 50 A, and the reverse recovery time of the internal diode is 37 ns — fast enough to keep the freewheeling diode from dominating the turn-on loss in a half-bridge leg.