650 V / 60 A trench field-stop IGBT in TO-220 full-pack
The STGF30M65DF2 is a 650 V, 60 A trench field-stop IGBT from STMicroelectronics' M series, housed in a TO-220 Full Pack (TO-220FP) through-hole package.
Conduction and switching losses at 400 V / 30 A
At 15 V gate drive and 30 A collector current, the typical Vce(on) is 2 V — that's 60 W conduction loss at 30 A, which sets the DC or low-frequency dissipation floor. Under the test condition of 400 V, 30 A, 10 Ω gate resistor, the turn-on switching energy is 300 µJ and turn-off is 960 µJ. The 80 nC total gate charge is moderate; a standard IGBT driver with 2 A peak output can switch this device at 20–30 kHz without excessive gate-drive power.
Temperature range and junction limits
Pulsed current and reverse recovery
Pulsed collector current rating is 120 A (Icm), useful for short-circuit or inrush events. The internal co-packaged diode has a reverse recovery time of 140 ns — adequate for hard-switching topologies, though a fast-recovery external diode may still be needed for critical ZVS or high-frequency designs.