600V, 9A PowerMESH™ IGBT in TO-220FP
The STGF10NC60KD is a 600 V, 9 A IGBT from STMicroelectronics' PowerMESH™ series, housed in a TO-220 Full Pack (TO-220FP) through-hole package.
Conduction and switching numbers that matter
The 600 V collector-emitter breakdown gives enough headroom for 230 VAC rectified bus (≈325 VDC) or 380 VDC rail in a motor drive. Total gate charge is 19 nC, low enough that a simple bootstrap gate-drive IC can switch it at moderate frequency without a separate isolated supply. Switching losses at the 390 V, 5 A, 10 Ω gate resistor test condition are 55 µJ turn-on and 85 µJ turn-off — figures that let you estimate junction temperature rise before you pick a heatsink.
Pulsed current and thermal envelope
Pulsed collector current is rated 30 A — useful for capacitor charging, inrush limiting, or short-circuit-withstand checks. The 25 W maximum power dissipation in the TO-220FP package means the heatsink is not optional above a few watts; the full-pack case has higher thermal resistance than a standard TO-220 with an exposed metal tab. The 22 ns reverse recovery time of the internal co-pack diode matters when the IGBT commutates into an inductive load — shorter trr reduces the dead-time needed in the complementary switch.
ROHS3 compliant.