650 V / 20 A Trench Field Stop in a full-pack isolated package
The STGF10M65DF2 is a 650 V, 20 A Trench Field Stop IGBT from STMicroelectronics' M series, housed in the TO-220FP full-pack plastic package. Typical applications include motor drive inverters, power factor correction (PFC) circuits, induction heating, and general-purpose hard-switching power supplies up to several kilowatts.
A total gate charge of 28 nC at 15 V drive is moderate for a 20 A IGBT. A typical gate driver IC with 1 A peak source/sink capability can switch the gate in roughly 30 ns, keeping the Miller plateau transition short. The 120 µJ turn-on and 270 µJ turn-off energies (tested at 400 V, 10 A, 22 Ω gate resistor, 15 V drive) set the per-cycle switching loss — at 20 kHz switching frequency the combined loss is about 7.8 W, which the TO-220FP package can handle with adequate heatsinking given the 30 W maximum power dissipation. At 10 A and 50 % duty cycle the conduction loss is 10 W — the dominant term in most hard-switched designs up to about 30 kHz. Above that frequency the switching losses catch up and a faster device (lower Qg, lower Eon/Eoff) becomes worthwhile.
The TO-220FP package is a standard through-hole form factor. The 0.50 mm pitch leads are compatible with standard 2.54 mm pitch prototyping boards and wave-solder processes.
Switching speed and reverse recovery
Turn-on delay is 19 ns and turn-off delay is 91 ns at 25 °C. The 96 ns reverse recovery time (trr) of the internal co-pack diode is fast enough for continuous-current-mode PFC and motor-drive freewheeling without excessive diode recovery losses. The Trench Field Stop structure gives a soft turn-off tail — reduces EMI compared to punch-through IGBTs of the same voltage class.