600 V, 10 A trench field-stop IGBT in DPAK
The STMicroelectronics STGD5H60DF is a trench gate field-stop IGBT rated for 600 V collector-emitter breakdown and 10 A continuous collector current, with 20 A pulsed capability. The trench field-stop structure delivers lower conduction and switching losses compared to planar IGBTs of similar voltage class. Housed in a TO-252-3 DPAK surface-mount package, this part is designed for automated assembly in power conversion stages where board space is constrained.
Switching performance and thermal headroom
Total gate charge is 43 nC, keeping the drive requirement modest for a 600 V, 10 A device. Switching energy is specified at 56 µJ (turn-on) and 78.5 µJ (turn-off) under the test condition of 400 V, 5 A, 47 Ohm gate resistor, 15 V gate drive. Turn-on delay is 30 ns and turn-off delay 140 ns at 25°C. This on-state voltage directly sets the conduction loss in the application.
It is ROHS3 compliant.