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STMicroelectronics STGD5H60DF

STGD5H60DF Trench Field Stop IGBT, 600V 10A DPAK

MPNSTGD5H60DF
End of Life

STMicroelectronics STGD5H60DF trench gate field-stop IGBT, 600 V collector-emitter breakdown, 10 A continuous collector current, 20 A pulsed, DPAK surface-mount package.

$1.12Ref. price · indicative, final on quote
STMicroelectronics STGD5H60DF datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGD5H60DF specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)10 A
Current - collector pulsed20 A
Power - max83 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge43 nC
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Test condition400V, 5A, 47Ohm, 15V
Switching energy56µJ (on), 78.5µJ (off)
Td (on/off) @ 25°C30ns/140ns
Vce(on) (Max) @ vge, ic1.95V @ 15V, 5A
Reverse recovery time134.5 ns

Product details

600 V, 10 A trench field-stop IGBT in DPAK

The STMicroelectronics STGD5H60DF is a trench gate field-stop IGBT rated for 600 V collector-emitter breakdown and 10 A continuous collector current, with 20 A pulsed capability. The trench field-stop structure delivers lower conduction and switching losses compared to planar IGBTs of similar voltage class. Housed in a TO-252-3 DPAK surface-mount package, this part is designed for automated assembly in power conversion stages where board space is constrained.

Switching performance and thermal headroom

Total gate charge is 43 nC, keeping the drive requirement modest for a 600 V, 10 A device. Switching energy is specified at 56 µJ (turn-on) and 78.5 µJ (turn-off) under the test condition of 400 V, 5 A, 47 Ohm gate resistor, 15 V gate drive. Turn-on delay is 30 ns and turn-off delay 140 ns at 25°C. This on-state voltage directly sets the conduction loss in the application.

It is ROHS3 compliant.

Frequently asked questions

Where can I buy the STGD5H60DF?

Submit a request for quote to confirm current availability and pricing.

What is the difference between a trench gate IGBT and a planar IGBT?

The STGD5H60DF uses a trench gate field-stop structure. Trench gate IGBTs typically offer lower on-state voltage drop and faster switching than planar IGBTs of the same voltage class because the vertical trench channel eliminates the JFET region present in planar cells. This translates to lower conduction losses and reduced switching energy in the application.

Can the STGD5H60DF be used for motor drive applications?

Yes. The 600 V blocking voltage and 10 A continuous current rating suit it for inverter stages in fractional-horsepower motor drives, appliance motor control, and similar power conversion where a DPAK surface-mount IGBT fits the board layout.