Trench Field Stop IGBT for hard-switching and resonant converters
The STGD4M65DF2 is a 650 V, 8 A Trench Field Stop IGBT from STMicroelectronics, housed in a DPAK (TO-252-3) surface-mount package. It targets applications requiring low conduction loss and fast switching — think induction heating, PFC stages, motor drives, and UPS inverters. Gate charge is 15.2 nC, which means the gate driver doesn't need to push much current for fast turn-on. Switching energy numbers — 40 µJ turn-on, 136 µJ turn-off — are measured at 400 V, 4 A, 47 Ω gate resistor, giving a realistic benchmark for hard-switched topologies.
Switching performance and drive requirements
The STGD4M65DF2 is a standard-gate-drive IGBT — no built-in ESD clamp or logic-level threshold, so plan for a 15 V gate drive rail to hit the rated Vce(on). The 15.2 nC gate charge.
No PCN or LTB notices are on record for this part as of the last status check. For dual-source planning, the Serie.