Automotive-grade PowerMESH™ IGBT in DPAK
The STGD18N40LZT4 is an STMicroelectronics PowerMESH™ IGBT rated for 420 V collector-emitter breakdown and 25 A continuous collector current, housed in a DPAK surface-mount package. AEC-Q101 qualification confirms suitability for automotive power-train and chassis-domain applications where reliability screening is mandatory. The 29 nC total gate charge keeps the gate-drive power low, a practical advantage when the IGBT is switched from a logic-level PWM controller through a bootstrap supply.
Switching performance and thermal headroom
Turn-on delay is 650 ns and turn-off delay is 13.5 µs at 25°C under a 300 V, 10 A test condition with a 5 V gate drive — the asymmetric delay reflects the Miller plateau during turn-off and must be factored into dead-time settings in half-bridge topologies. Continuous collector current is 25 A; pulsed current capability reaches 40 A, sized for inrush and short-circuit events in motor-drive and inductive-load switching. Collector-emitter saturation voltage is 1.7 V typical at 4.5 V gate drive and 10 A collector current, which sets the conduction loss floor for efficiency calculations.
ROHS3 compliant; no exemption claims needed for lead-free assembly lines.