600 V, 25 A — where this IGBT sits in the PowerMESH™ line
The STGB7NC60HDT4 is a 600 V, 25 A IGBT from STMicroelectronics' PowerMESH™ series, housed in a TO-263-3 D²Pak surface-mount package. The 600 V collector-emitter breakdown voltage places it in the standard 600 V class for motor drives, PFC stages, welding inverters, and UPS systems where the DC bus typically runs 300–400 V. The 25 A continuous collector current and 50 A pulsed capability give headroom for inrush and transient loads common in industrial power stages.
Switching losses and gate drive budget
The 35 nC total gate charge is modest — at a 20 kHz switching frequency the average gate drive current needed is about 0.7 mA, so a standard gate driver IC handles it without a booster stage. The switching energy numbers of 95 µJ turn-on and 115 µJ turn-off, measured at 390 V, 7 A, 10 Ω gate resistor, 15 V gate drive, let you calculate the switching loss contribution. At 20 kHz, the switching loss alone runs about 4.2 W; add the conduction loss from the 2.5 V Vce(sat) at 7 A and the total die dissipation lands inside the 80 W max power rating with proper heatsinking.