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STMicroelectronics STGB10NB37LZT4

STGB10NB37LZT4 IGBT, 440V 20A, PowerMESH, D2PAK

MPNSTGB10NB37LZT4
End of Life

STMicroelectronics PowerMESH IGBT, STGB10NB37LZT4, 440 V Vces, 20 A Ic, 28 nC gate charge, 1.8 V Vce(on) at 4.5 V Vge, D2PAK (TO-263) surface mount, -65 to 175 °C junction temperature.

$3.93Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesPowerMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGB10NB37LZT4 specifications
ParameterValue
SeriesPowerMESH™
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown440 V
Current - collector (Ic)20 A
Current - collector pulsed40 A
Power - max125 W
Operating temperature-65°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Gate charge28 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition328V, 10A, 1kOhm, 5V
Switching energy2.4mJ (on), 5mJ (off)
Td (on/off) @ 25°C1.3µs/8µs
Vce(on) (Max) @ vge, ic1.8V @ 4.5V, 10A

Product details

440 V, 20 A — the voltage-current ceiling for the switching cell

The STGB10NB37LZT4 is a 440 V, 20 A IGBT from ST's PowerMESH series, housed in a D2PAK (TO-263) surface-mount package. It is designed for medium-voltage switched-mode circuits where a logic-level gate drive (4.5 V) can saturate the output stage without a separate 12 V rail.

Logic-level saturation — 1.8 V at 4.5 V gate drive

Vce(on) is 1.8 V maximum at 4.5 V Vge and 10 A Ic, which means a standard 5 V microcontroller output or a 5 V gate-driver IC can drive this IGBT into hard saturation without a boost stage. The 28 nC total gate charge keeps the drive current requirement modest — roughly 28 mA at 1 MHz switching frequency.

Switching dynamics — dead-time and loss budget

Turn-on delay is 1.3 µs and turn-off delay is 8 µs at 25°C, tested at 328 V, 10 A, 1 kΩ gate resistor, 5 V gate drive. The switching energy is 2.4 mJ on and 5 mJ off under the same conditions. These numbers set the minimum dead-time in a half-bridge leg and the per-cycle loss that drives the heatsink calculation.

175°C junction — high-temperature margin for industrial environments

Frequently asked questions

What gate drive voltage does STGB10NB37LZT4 need to saturate?

Vce(on) is specified at 4.5 V Vge, so a standard 5 V logic-level gate drive is sufficient. The 28 nC gate charge means a small gate-driver IC or a microcontroller output with a totem-pole buffer can drive it at moderate switching frequencies.

What is the maximum junction temperature for STGB10NB37LZT4?

The junction temperature range is -65°C to 175°C. The 175°C Tj max allows operation in high-ambient environments such as under-hood automotive or enclosed industrial drives, provided the thermal path to the heatsink is adequate.