The STGB10M65DF2 is a 650 V, 20 A Trench Field Stop IGBT from STMicroelectronics, housed in a surface-mount TO-263 (D2PAK) package. The Trench Field Stop structure delivers a low saturation voltage of 2 V at 15 V gate drive and 10 A collector current, combined with fast switching — 19 ns turn-on delay and 91 ns turn-off delay at 25 °C. Typical applications include power factor correction (PFC) stages, motor drives, induction heating, and uninterruptible power supplies (UPS) where the 650 V rating covers 400 V DC bus rails with margin.
Tested at 400 V, 10 A, 22 Ω gate resistor, 15 V gate drive, the STGB10M65DF2 switches 120 µJ on and 270 µJ off. The 28 nC total gate charge means a 1 A gate driver can charge the gate in under 30 ns, keeping switching losses manageable at 20–50 kHz hard-switched frequencies. The 96 ns reverse recovery time (trr) of the internal diode is fast enough for continuous-conduction-mode PFC without external fast-recovery diodes in most designs.
Thermal and package — mounting the D2PAK on the board
The maximum power dissipation is 115 W, but the real junction-to-ambient thermal resistance depends on the PCB copper area — a 2 oz copper pour of at least 6 cm² under the tab is typical for keeping the junction below 175 °C at 10 A continuous.
ROHS3 compliant.