600 V, 20 A Trench Field Stop — the switching-loss story
The STGB10H60DF is a 600 V, 20 A Trench Field Stop IGBT from STMicroelectronics in a D²PAK (TO-263) surface-mount package. The Trench Field Stop structure gives it a low Vce(on) of 1.95 V typical at 15 V gate drive and 10 A, while the 57 nC total gate charge keeps the driver stage small. Switching energy comes in at 83 µJ on and 140 µJ off under the test condition of 400 V, 10 A, 10 Ω gate resistor, 15 V rail — numbers that let you pencil out the dissipation budget for a 20–40 kHz hard-switched converter before you touch a soldering iron.
What the 107 ns trr tells the repair bench
The integrated co-pack diode has a 107 ns reverse recovery time. On a dead PFC stage, if the boost diode is shorted and the IGBT is still measuring okay on the meter, the trr mismatch between a replacement IGBT and the original can shift the turn-off loss enough to cook the new part in the first hundred cycles. This part's trr is on the datasheet — match it when you swap.
Active production, no LTB on the horizon
The D²PAK footprint is shared across the STGBx family, so if a future spin changes the die, the board layout stays the same.