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STMicroelectronics STFH10N60M2 — Discrete Semiconductors

STMicroelectronics STFH10N60M2 N-Channel MOSFET

MPNSTFH10N60M2
Active

STMicroelectronics MDmesh™ N-Channel MOSFET, STFH10N60M2, 600 Vdss, 7.5 A Id, 600 mOhm Rds(on), TO-220-3 Full Pack, Tube.

$1.5900Ref. price · indicative, final on quote
STMicroelectronics STFH10N60M2 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFH10N60M2 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 100 V

Product details

Package and mounting — TO-220FP full-pack isolation

The STFH10N60M2: The TO-220-3 Full Pack (supplier device package TO-220FPAB) is a fully isolated through-hole package — the metal tab is encapsulated, so no separate insulating washer or thermal pad is needed when mounting to a heatsink. This simplifies assembly and reduces BOM count but increases thermal resistance compared to a standard TO-220 with an insulator. Operating junction temperature range is -55°C to 150°C, covering industrial and military temperature grades.

The base product number is STFH10, and the part is part of the MDmesh™ series — ST's high-voltage trench-gate MOSFET platform.

Peer comparison — same footprint, different voltage/current trade-offs

The STFH10N60M2 shares the same TO-220FP full-pack footprint with several MDmesh™ peers. The STF10LN80K5 is an 800 V, 8 A device with 630 mOhm Rds(on) and ±30 V gate rating — higher voltage headroom but slightly higher on-resistance. The STF11N60M2-EP is a 600 V, 7.5 A part with 595 mOhm Rds(on) and a 4.75 V threshold, very close parametrics but from the M2-EP enhanced-performance series. The STF13N60M2 offers 600 V, 11 A with 380 mOhm Rds(on) — lower resistance and higher current, but at 17 nC gate charge it needs more drive.

Frequently asked questions

What is the closest functional second-source for STFH10N60M2 — will STF10LN80K5 drop in without rewiring?

The STF10LN80K5 is a close peer in the same TO-220FP full-pack footprint, but it is an 800 V, 8 A device with 630 mOhm Rds(on) and a ±30 V gate rating. It will physically fit the same PCB footprint, but the higher voltage rating and different gate threshold (5 V at 100 µA) mean the gate drive circuit and switching performance may differ. Verify the gate drive voltage and switching losses in your application before substituting.

What compliance documentation does STMicroelectronics provide for STFH10N60M2?

The STFH10N60M2 is ROHS3 compliant. STMicroelectronics provides RoHS and REACH declarations through their standard compliance documentation.