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STMicroelectronics STF8NM60ND — Discrete Semiconductors

STF8NM60ND MOSFET, 600V N-Channel, 700mOhm, TO-220FP

MPNSTF8NM60ND
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STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 7 A continuous drain, 700 mOhm Rds(on) at 10 V, TO-220-3 Full Pack through-hole, 25 W power dissipation.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF8NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds560 pF @ 50 V

Product details

600 V N-channel in a fully isolated TO-220FP

The STMicroelectronics STF8NM60ND is a 600 V N-channel power MOSFET from the FDmesh™ II series, built with a planar stripe layout that balances on-resistance and switching speed for offline power conversion. The TO-220FP full-pack package provides full isolation from the heatsink — no insulating pad or washer needed, which simplifies assembly and improves thermal coupling in high-voltage supplies.

With a maximum Rds(on) of 700 mOhm at 10 V and 3.5 A, conduction loss at full load stays under 3.5 W (I²R) — manageable in the TO-220FP's 25 W dissipation ceiling. Input capacitance is 560 pF at 50 V drain-source, which means the gate drive sees a light capacitive load — a standard 1 A gate driver can switch it cleanly without excessive cross-conduction.

For dual-sourcing or a pin-compatible alternate within the same FDmesh™ II family, check the STF8NM60N (non-ND suffix) — the ND variant typically includes tighter parametric limits, but verify the exact Rds(on) and gate charge against your BOM requirements.

Frequently asked questions

What is the Rds(on) max of STF8NM60ND at 10V?

The maximum on-resistance is 700 mOhm at 10 V gate drive with 3.5 A drain current. This is the figure to use for worst-case conduction loss calculations in your thermal model.

What package and mounting type does STF8NM60ND use?

It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package. The full-pack construction provides electrical isolation between the mounting tab and the die, so no insulating washer is required when bolting to a heatsink.