600V, 7A N-channel in the full-pack TO-220FP
The STMicroelectronics STF8NM60N is a 600V, 7A N-channel power MOSFET built on the MDmesh™ II technology platform. The full-pack construction also improves creepage distance, which matters in designs targeting reinforced insulation.
The drive voltage requirement is 10 V for achieving the rated on-resistance, so a standard 12 V or 15 V gate-drive rail is appropriate — this part is not optimized for 5 V logic-level drive. Gate charge is 19 nC at 10 V, a moderate figure that keeps the gate-drive power loss manageable in hard-switched topologies running at 50–100 kHz. Input capacitance is 560 pF at 50 V Vds, which gives the designer a reasonable switching-loss estimate for the chosen frequency.
Maximum power dissipation is 25 W at the case, which in the TO-220FP full-pack means the thermal pad on the back of the package couples to the heatsink through the moulded plastic — expect higher thermal resistance than a standard TO-220 with a metal tab. The 25 W ceiling is a case-temperature-rated limit; real-world dissipation will be lower in still-air or convection-cooled layouts.
Lifecycle status — obsolete, sourced through independent channels
It is no longer manufactured by STMicroelectronics and is not available through the factory-authorized distribution channel. Sourcing is through the independent market — brokers, excess inventory, and surplus stock.