STMicroelectronics MDmesh™ II series, STF8NM50N, N-channel MOSFET, 500 V Vdss, 5 A continuous drain, 790 mOhm Rds(on) at 10 V, 14 nC gate charge, TO-220-3 Full Pack (TO-220FP), -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 20W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 790mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 364 pF @ 50 V |
The STF8NM50N: Total gate charge is 14 nC at 10 V. Input capacitance is 364 pF at 50 V drain bias.
The TO-220FP full-pack body has no exposed metal tab — the plastic moulding goes all the way through.
ROHS3 compliant.
Maximum on-resistance is 790 mOhm at 2.5 A drain current with 10 V gate drive. That is the number to use for worst-case conduction loss in a 500 V offline supply design.