650 V N-channel in a full-pack TO-220
Gate charge is 15 nC at 10 V, which means the driver sees a light reactive load and switching edges stay clean with modest gate drive current.
At lower gate voltages the on-resistance rises — the 5 V gate threshold maximum means the device is not fully enhanced below about 6 V, so a 10 V drive rail is the intended operating point. The 15 nC total gate charge at 10 V is light enough that a standard MOSFET driver with 1 A peak output can switch the gate in tens of nanoseconds; the input capacitance of 690 pF at 100 V Vds confirms the gate capacitance is modest, which helps keep the Miller plateau short and the switching losses contained in hard-switched topologies like PFC boost or flyback converters.
Maximum power dissipation is 25 W at case temperature, so a heatsink is required for any continuous load above a few watts.
For dual-sourcing or alternate-pin considerations, the base product number STF8 indicates a family of 650 V N-channel devices in the TO-220FP package — the same footprint accepts other current and Rds(on) variants within the series, though each should be qualified against the specific BOM requirements.