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STMicroelectronics STF8N60DM2 — Discrete Semiconductors

ST STF8N60DM2 N-Channel MOSFET, 600V 8A TO-220FP

MPNSTF8N60DM2
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STMicroelectronics STF8N60DM2, MDmesh™ DM2 series N-Channel MOSFET, 600V Vdss, 8A Id, 600mOhm Rds(on) @ 4A 10V, TO-220-3 Full Pack, Through Hole, -55°C ~ 150°C junction.

$0.7542Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF8N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds449 pF @ 100 V

Product details

600 V N-channel MOSFET in TO-220 Full Pack — MDmesh DM2

On-resistance and gate charge — switching loss budget

The drive voltage range is 10 V for both the max and min Rds(on) — this part is not optimized for 5 V logic-level drive, so budget a 10 V gate supply or a bootstrap rail. Total gate charge (Qg) is 13.5 nC at 10 V, and input capacitance (Ciss) is 449 pF at 100 V drain-source. Those numbers keep switching losses manageable in hard-switched topologies running at 50–150 kHz, which is the typical sweet spot for this class of device.

Junction temperature and power dissipation

Maximum power dissipation is 25 W at the case (Tc). The TO-220 Full Pack's isolation adds thermal resistance compared to a standard TO-220 — a heatsink is practically required above a few watts of continuous dissipation. The 150°C junction ceiling is the real limit; derate power linearly above 25°C case temperature per the datasheet curve.

Frequently asked questions

What is the Vds rating of STF8N60DM2?

The drain-to-source voltage (Vdss) is rated at 600 V. This is the maximum voltage the MOSFET can block in the off state.

Does STF8N60DM2 require a heatsink?

The maximum power dissipation is 25 W at the case temperature. The TO-220 Full Pack package has an isolated tab, which simplifies mounting, but at any significant power level a heatsink is necessary to keep the junction temperature within the -55°C to 150°C operating range.