Skip to main content
Log in
STMicroelectronics STF6NM60N — Discrete Semiconductors

STF6NM60N MDmesh II N-Channel MOSFET, 600 V, 4.6 A, TO-220FP

MPNSTF6NM60N
Obsolete

STMicroelectronics MDmesh™ II series, STF6NM60N, N-Channel MOSFET, 600 V Vdss, 4.6 A Id, 920 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

STMicroelectronics STF6NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF6NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.6A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs920mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds420 pF @ 50 V

Product details

600 V, 4.6 A, 920 mOhm — what this MDmesh II MOSFET brings to the switching supply

Buyers holding a BOM line with this order code should plan for last-time-buy or surplus-channel procurement.

Gate charge and capacitance — what the switching numbers mean for the driver

These are modest numbers for a 600 V part — the driver sees a light capacitive load, so a standard gate-drive IC or even a discrete transistor pair can switch it cleanly at moderate frequencies. No need for a boosted gate voltage; a standard 10 V bias rail works.

Frequently asked questions

What is the replacement for STF6NM60N?

The STF6N60M2 is the direct pin-compatible successor in the MDmesh M2 series. It shares the same TO-220FP package, 600 V Vdss, and 4.6 A Id rating, with a lower typical Rds(on) of 650 mOhm. It is a drop-in replacement for the STF6NM60N.