STMicroelectronics MDmesh™ series, N-Channel MOSFET, 650 V drain-source, 4 A continuous drain at 25°C, 1.35Ohm Rds(on) at 2 A, 10 V, 9.8 nC gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 20W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.35Ohm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 226 pF @ 100 V |
The STF6N65M2: The TO-220FP (TO-220 Full Pack) has a fully molded, isolated tab — no exposed metal on the mounting surface.
It is ROHS3 compliant. For dual-sourcing, the closest pin-compatible alternative within the same MDmesh™ family would be a similar 650 V, 4 A N-channel in TO-220FP — verify Rds(on) and gate charge against your switching loss budget before substituting.
A pin-compatible alternative within the same MDmesh™ family would be another 650 V, 4 A N-channel MOSFET in TO-220FP. Check the Rds(on) and gate charge specs against your design's switching and conduction loss budget before substituting.