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STMicroelectronics STF6N62K3 — Discrete Semiconductors

STF6N62K3 N-Ch MOSFET, 620 V, 5.5 A, TO-220FP

MPNSTF6N62K3
Active

STMicroelectronics SuperMESH3™ N-Channel MOSFET, STF6N62K3, 620 Vdss, 5.5 A Id, 1.28 Ohm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.

$2.1200Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF6N62K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage620 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.5A (Tc)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.28Ohm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds875 pF @ 50 V

Product details

620 V, 5.5 A N-channel in TO-220FP

The STF6N62K3 is an N-channel MOSFET from STMicroelectronics' SuperMESH3™ series, rated for 620 V drain-to-source voltage and 5.5 A continuous drain current at 25°C case temperature. The 1.28 Ohm maximum on-resistance at 2.8 A and 10 V gate drive sets the conduction loss floor — at full rated current the dissipation in the channel alone is roughly 39 W, which exceeds the 30 W package limit, so real-world operation derates the current or requires a heatsink that keeps the junction below 150°C. The through-hole TO-220FP full-pack package isolates the metal tab from the drain, so the device can be bolted directly to a chassis or heatsink without an insulating pad — a time-saver on the assembly line and one less thermal interface to model. The 30 W maximum power dissipation at case temperature is the thermal budget to work with; a 50°C ambient with a 1°C/W heatsink leaves about 70°C junction rise, which is comfortable for continuous 2 A loads.

Gate drive and switching profile

Gate charge is 34 nC at 10 V gate drive — a manageable figure for a discrete driver or a PWM controller's totem-pole output. At a 50 kHz switching frequency the average gate-drive current is 1.7 mA, well within the capability of most gate-drive ICs. The 875 pF input capacitance at 50 V drain bias means the driver sees a capacitive load that rises with the Miller plateau; the total switching loss depends on how fast the driver can push that 34 nC in and out. The 4.5 V gate threshold at 50 µA drain current is a typical SuperMESH3 figure — the device is fully enhanced at 10 V drive (the specified Rds(on) condition) but will start conducting well below that. For logic-level drive at 5 V the on-resistance will be higher than the 1.28 Ohm datasheet value, so factor that into the conduction loss calculation if the gate drive rail is not 10 V.

Lifecycle and compliance

The base product number is STF6, covering the TO-220FP family in this voltage and current class. The part is supplied in Tube packaging — 50 pieces per tube typical for TO-220, though the exact quantity per tube should be confirmed with the distributor at order time.