600 V N-channel MOSFET — MDmesh II Plus
STF6N60M2 N-channel MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package, rated 600 V Vdss.
Conduction and switching — 1.2 Ohm Rds(on), 8 nC Qg
Maximum on-resistance is 1.2 Ohm at 2.25 A drain current with 10 V gate drive — the conduction loss floor for the load current. Total gate charge is 8 nC at 10 V, a light load on the gate driver that keeps switching losses manageable at moderate frequencies. Input capacitance is 232 pF at 100 V drain-to-source, contributing to a low Miller plateau charge and fast switching edges.