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STMicroelectronics STF6N60M2 — Discrete Semiconductors

STF6N60M2 N-Channel MOSFET, 600 V, 4.5 A, TO-220FP

MPNSTF6N60M2
Active

STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 4.5 A Id, 1.2 Ohm Rds(on) at 2.25 A, 10 V, 8 nC Qg, TO-220-3 Full Pack (TO-220FP), -55°C to 150°C junction temperature.

$1.6100Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF6N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.25A, 10V
Gate charge (Qg) (Max) @ vgs8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds232 pF @ 100 V

Product details

600 V N-channel MOSFET — MDmesh II Plus

STF6N60M2 N-channel MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package, rated 600 V Vdss.

Conduction and switching — 1.2 Ohm Rds(on), 8 nC Qg

Maximum on-resistance is 1.2 Ohm at 2.25 A drain current with 10 V gate drive — the conduction loss floor for the load current. Total gate charge is 8 nC at 10 V, a light load on the gate driver that keeps switching losses manageable at moderate frequencies. Input capacitance is 232 pF at 100 V drain-to-source, contributing to a low Miller plateau charge and fast switching edges.

Temperature range and power dissipation

Frequently asked questions

What is the gate charge of the STF6N60M2 and why does it matter?

Total gate charge is 8 nC at 10 V. This low Qg means the gate driver does not need to supply large peak currents, keeping switching losses low and simplifying driver selection for moderate-frequency converters.