STMicroelectronics STF6N60DM2 N-channel MDmesh DM2 MOSFET, 600 V Vdss, 5 A Id, 1.1 Ohm Rds(on) at 10 V, 6.2 nC gate charge, TO-220FP through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 20W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 274 pF @ 100 V |
The STF6N60DM2: The 1.1 Ohm maximum on-resistance at Vgs=10 V and 2.5 A sets the conduction loss baseline; the 6.2 nC total gate charge at 10 V keeps the gate-drive burden low enough for basic PWM controllers without a dedicated driver stage.
ST's STP6N60M2 is the same MDmesh DM2 die in a TO-220 package — same 600 V / 5 A / 1.1 Ohm ratings — but the TO-220 metal tab changes the thermal path and mounting hole pattern versus the TO-220FP full-pack. The STF6N60DM2's isolated tab eliminates the need for a sil-pad or mica washer.