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STMicroelectronics STF6N52K3 — Discrete Semiconductors

STF6N52K3 N-Channel MOSFET, 525 V, 5 A, TO-220FP, Obsolete

MPNSTF6N52K3
Obsolete

STMicroelectronics SuperMESH3™ series, N-Channel MOSFET, 525 V drain-source, 5 A continuous drain, 1.2 Ohm Rds(on) at 10 V, through-hole TO-220-3 Full Pack, -55°C to 175°C junction.

$1.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF6N52K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage525 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds670 pF @ 50 V

Product details

1.2 Ohm Rds(on) and 26 nC gate charge — conduction and switching budget

The STF6N52K3: Input capacitance is 670 pF at 50 V drain-source.

The STF6N52K3 is listed as obsolete. Buyers should evaluate functionally similar SuperMESH3 devices from STMicroelectronics with comparable 525 V and 5 A ratings in the same TO-220FP package.

Thermal and mounting — TO-220FP full-pack advantage

The TO-220FP full-pack package isolates the tab from the drain potential, so no mica washer or insulating pad is needed when mounting to a grounded heatsink. The through-hole mounting suits point-to-point wiring and board-level repairs.

Frequently asked questions

What is the replacement or equivalent for STF6N52K3?

For new designs, evaluate functionally similar STMicroelectronics SuperMESH3 N-channel MOSFETs with a 525 V drain-source rating and 5 A continuous current in the TO-220FP package.

What are the specifications of STF6N52K3?

It comes in a through-hole TO-220FP full-pack package and operates from -55°C to 175°C junction temperature.