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STMicroelectronics STF5NK100Z — Discrete Semiconductors

STF5NK100Z MOSFET, N-Ch 1000V 3.5A TO-220FP, Active

MPNSTF5NK100Z
Active

STMicroelectronics SuperMESH3™ STF5NK100Z, N-Channel MOSFET, 1000 V Vdss, 3.5 A Id, 3.7 Ohm Rds(on), TO-220-3 Full Pack (TO-220FP), Through Hole, -55 to 150 °C.

$4.2500Ref. price · indicative, final on quote
STMicroelectronics STF5NK100Z datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF5NK100Z specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.5A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 100µA
Rds on (Max) @ id, vgs3.7Ohm @ 1.75A, 10V
Gate charge (Qg) (Max) @ vgs59 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1154 pF @ 25 V

Product details

1000 V N-channel in a fully isolated TO-220FP

On-resistance is specified at 3.7 Ohm maximum with 1.75 A drain current and 10 V gate drive. At 25 °C junction, conduction loss at 1.75 A is about 11 W; at 100 °C junction the Rds(on) roughly doubles, so budget the thermal path accordingly. The 59 nC total gate charge at 10 V is moderate — a standard MOSFET driver can switch it at 50-100 kHz without excessive drive loss, but the input capacitance of 1154 pF at 25 V drain-source means the driver must source and sink enough peak current to charge and discharge the gate in the dead time.

Frequently asked questions

Is the STF5NK100Z a direct replacement for the STF5NK100?

The base product number STF5NK100 covers both the original and the Z-version. The STF5NK100Z is the SuperMESH3™ generation — the electrical ratings (1000 V Vdss, 3.5 A Id, 3.7 Ohm Rds(on)) are identical to the earlier STF5NK100, so it is a drop-in replacement in the same TO-220FP footprint. Verify the gate threshold and drive voltage match your existing gate drive design; the Z-version's Vgs(th) max is 4.5 V at 100 µA.