STMicroelectronics SuperMESH5™ N-Channel MOSFET, STF5N95K5, 950 V Vdss, 3.5 A continuous drain, 2.5 Ohm Rds(on) at 10 V, TO-220-3 Full Pack package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | SuperMESH5™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 950 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.5Ohm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 220 pF @ 100 V |
At 1.5 A drain current, the conduction loss calculates to about 5.6 W, which must be dissipated through the TO-220FP package's 25 W power rating.
For new designs or BOM replenishment, there is no imminent obsolescence risk.
The maximum drain-source voltage (Vdss) is 950 V, suitable for 400 VDC bus applications in offline flyback, PFC, and auxiliary power supplies.
The maximum on-resistance is 2.5 Ohm at 1.5 A drain current and 10 V gate drive. At lower gate voltages the Rds(on) increases — the 5 V gate threshold (max) means 10 V drive is recommended for fully enhanced operation.
The maximum gate threshold voltage (Vgs(th)) is 5 V at 100 µA drain current. Typical threshold is lower, but the 5 V max sets the worst-case turn-on point for bias design.
The part is listed with a Tube packaging and is part of ST's standard product line. RoHS compliance is typical for current ST MOSFETs, but confirm the specific date/lot code compliance certificate with your order.
STMicroelectronics does not list a direct pin-compatible substitute in the same series. For a functional equivalent at 950 V and similar Rds(on), evaluate the STF5N95K3 or STF5N95K4 from the same SuperMESH5 family — verify pinout and thermal performance in your layout.