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STMicroelectronics STF5N95K3 — Discrete Semiconductors

STF5N95K3 N-Channel MOSFET, 950V, 4A, TO-220FP

MPNSTF5N95K3
Active

STMicroelectronics SuperMESH3™ series, N-channel MOSFET, 950V Vdss, 4A continuous drain, 3.5 Ohm Rds(on) at 2A, 10V, 19 nC gate charge, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$3.0300Ref. price · indicative, final on quote
STMicroelectronics STF5N95K3 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSuperMESH3™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF5N95K3 specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 25 V

Product details

The STF5N95K3 is an N-channel MOSFET in a TO-220 Full Pack (TO-220FP) package, rated for 950 V drain-to-source voltage and 4 A continuous drain current.

On-resistance and gate charge — sizing the drive and thermal budget

At 4 A the Rds(on) will be higher — budget for conduction loss using the normalised Rds(on) vs. Id curve in the datasheet. Total gate charge is 19 nC at Vgs = 10 V, which keeps the gate drive energy low enough for a simple bootstrap or transformer-coupled driver at switching frequencies up to 100 kHz or so. Input capacitance Ciss is 460 pF at Vds = 25 V. Combined with the 19 nC gate charge, the gate driver load is light.

Frequently asked questions

What is the Rds(on) of STF5N95K3?

Actual Rds(on) increases with junction temperature — refer to the normalised curve in the datasheet for your operating point.