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STMicroelectronics STF5N80K5 — Discrete Semiconductors

STF5N80K5 MOSFET N-CH 800V 4A TO220FP MDmesh™

MPNSTF5N80K5
Active

STMicroelectronics STF5N80K5, MDmesh™ N-channel MOSFET, 800 Vdss, 4 A continuous drain, 1.75 Ohm Rds(on) at 2 A, 10 V, TO-220 Full Pack, -55 to 150 °C.

$1.8400Ref. price · indicative, final on quote
STMicroelectronics STF5N80K5 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF5N80K5 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs1.75Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds177 pF @ 100 V

Product details

800 V N-channel in a full-pack through-hole

The STF5N80K5 is an 800 V, 4 A N-channel MOSFET from ST's MDmesh™ series, housed in the TO-220 Full Pack (TO-220FP) package. The full-pack moulding isolates the tab electrically, so the heatsink can be grounded without an insulating washer — a practical advantage in offline flyback converters, PFC stages, and auxiliary power supplies where the drain sits at high voltage.

Switching loss budget: low gate charge and capacitance

On-resistance is 1.75 Ohm max at 2 A, 10 V.

For a BOM line in a power supply design, this part is a clean fit for new production — no LTB risk, no compliance gap.

Frequently asked questions

Is STF5N80K5 RoHS compliant?

Yes, the STF5N80K5 is rated ROHS3 Compliant.