Skip to main content
STMicroelectronics STF5N60M2 — Discrete Semiconductors

STF5N60M2 N-Channel MOSFET, 600V 3.7A TO-220FP

MPNSTF5N60M2
Active

STMicroelectronics MDmesh™ II Plus series, STF5N60M2, N-Channel MOSFET, 600 V Vdss, 3.7 A Id, 1.4 Ohm Rds(on) at 10 V, 4.5 nC Qg, TO-220-3 Full Pack (TO-220FP), through-hole mount, 150°C junction temperature.

$1.5400Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF5N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.7A (Tc)
Power dissipation20W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.4Ohm @ 1.85A, 10V
Gate charge (Qg) (Max) @ vgs4.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds165 pF @ 100 V

Product details

600 V N-channel in a full-pack isolator

On-resistance and gate charge — the switching trade-off

Rds(on) is 1.4 Ohm maximum at 1.85 A drain current with 10 V gate drive. The 20 W power dissipation limit sets the thermal ceiling for conduction and switching losses combined. Total gate charge Qg is 4.5 nC at Vgs=10 V, and input capacitance Ciss is 165 pF at Vds=100 V. These are low numbers for a 600 V device — the gate driver sees a light capacitive load, so switching transition times stay short even with a modest drive current. In a 100 kHz flyback, the gate-drive power required is roughly Qg × Vgs × fsw = 4.5 nC × 10 V × 100 kHz = 4.5 mW, negligible in the system budget.

Package thermal reality — the full-pack trade-off

The TO-220FP (supplier device package TO-220FP) has a fully isolated plastic tab — no metal backside, no mounting hole. For continuous operation above a few watts, a heatsink with good airflow or forced convection is necessary. The through-hole mounting suits boards where mechanical retention matters — the leads take the strain, unlike a surface-mount part that relies on solder fillets.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of STF5N60M2?

The maximum on-resistance is 1.4 Ohm at a drain current of 1.85 A with a gate-source voltage of 10 V. This is the value to use for worst-case conduction loss calculations at the rated gate drive.