1050 V N-channel MOSFET in a fully isolated TO-220 Full Pack
Its 1050 V drain-to-source voltage rating makes it suited for offline power supplies, flyback converters, and PFC stages where the DC bus sits at 400 V or higher and needs margin for line transients. This simplifies assembly and improves thermal coupling in designs where the heatsink is at chassis potential. The package is through-hole, so it suits point-to-point wiring or PCB layouts where wave-solder assembly is the process. This is not a commercial-temperature part; it is chosen when the system has to survive cold soak and hot engine-bay conditions alike.
Gate drive and switching considerations
The drive voltage for achieving the rated on-resistance is 10 V; the maximum gate-source voltage is ±30 V. The threshold voltage maximum is 5 V at 100 µA drain current, so the device is not a logic-level MOSFET. Input capacitance is 210 pF typical at 100 V drain-source, which is low and eases the drive burden for the upstream gate driver. The TO-220 Full Pack's metal tab is electrically isolated, so the heatsink can be shared with other isolated devices without risk of shorting the drain.