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STMicroelectronics STF57N65M5 — Discrete Semiconductors

STF57N65M5 N-Channel 650 V 42 A MOSFET, MDmesh V, TO-220FP

MPNSTF57N65M5
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STMicroelectronics MDmesh™ V series, N-Channel MOSFET, 650 V drain-source, 42 A continuous drain, 63 mΩ Rds(on) at 10 V drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$10.6900Ref. price · indicative, final on quote
STMicroelectronics STF57N65M5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF57N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs63mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4200 pF @ 100 V

Product details

650 V N-channel MOSFET in an isolated TO-220FP — what the MDmesh V platform delivers

The STF57N65M5 is an N-channel 650 V power MOSFET from STMicroelectronics' MDmesh V series, built on a fifth-generation super-junction technology that balances low on-resistance with fast switching. The fully isolated TO-220 Full Pack package (TO-220FP) allows direct heatsink mounting without an insulating pad, which simplifies assembly and improves thermal transfer in high-voltage offline designs such as power-factor-correction stages, LLC resonant converters, and two-switch forward topologies.

At 21 A, the dissipation from on-resistance alone is about 28 W, which the TO-220FP's 40 W power-dissipation ceiling must accommodate with adequate heatsinking. A driver capable of sourcing and sinking several amperes peak is recommended to keep switching transitions crisp and avoid excessive cross-conduction in bridge topologies.

Frequently asked questions

Can STF57N65M5 be used in high-frequency switching?

With a 98 nC gate charge and 4200 pF input capacitance, the STF57N65M5 is suited for switching frequencies typical of hard-switched PFC and LLC converters in the 50–200 kHz range. Higher frequencies require a gate driver with sufficient peak current to charge the gate capacitance quickly and avoid excessive switching losses.

How does STF57N65M5 compare to STF55N65M5?

The STF55N65M5 is a lower-current variant in the same MDmesh V family, typically rated for lower continuous drain current. The STF57N65M5 offers higher current capability (42 A) and the same 650 V drain-source rating. Pin-compatible in the same TO-220FP package, but the on-resistance and gate charge differ — check the respective datasheets for exact parametric differences before substituting.