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STMicroelectronics STF4N90K5 — Discrete Semiconductors

STF4N90K5 MOSFET N-CH 900V 4A TO-220FP, MDmesh K5

MPNSTF4N90K5
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STMicroelectronics STF4N90K5 MDmesh K5 N-Channel MOSFET, 900 Vdss, 4 A continuous drain, 2.1 Ohm Rds(on) at 10 V gate drive, TO-220FP through-hole package, -55°C to 150°C junction temperature.

$2.0400Ref. price · indicative, final on quote
STMicroelectronics STF4N90K5 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF4N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation20W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2.1Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds173 pF @ 100 V

Product details

The STF4N90K5: Total gate charge is 5.3 nC at 10 V, and input capacitance measures 173 pF at 100 V drain bias. These low values keep the gate-drive energy per cycle small — a 1 A gate-driver IC can switch this FET at 100 kHz without exceeding its drive current budget.

Maximum power dissipation is 20 W at case temperature.

ROHS3 compliant. The base product number is STF4N90, so the K5 suffix identifies the MDmesh generation; no pin-compatible second source or official replacement is documented in the available records.

Frequently asked questions

What is the replacement or cross reference for STF4N90K5?

No official replacement or cross-reference part is documented in the available records. The STF4N90K5 is the current MDmesh K5 generation; if a direct alternative is needed, compare the 900 V, 4 A, 2.1 Ohm Rds(on) ratings against other TO-220FP N-channel MOSFETs in the same voltage class.

What does the MDmesh K5 series mean for this MOSFET?

The MDmesh K5 series is ST's high-voltage MOSFET platform that uses a multi-drain mesh structure to reduce on-resistance while maintaining fast switching. For the STF4N90K5, this translates to the low 5.3 nC gate charge and 173 pF input capacitance at 100 V drain bias, which keeps switching losses low in hard-switched topologies.