800 V N-channel MOSFET — MDmesh K5 series
The STF4LN80K5: It is built on ST's MDmesh vertical structure, which reduces on-resistance per unit area compared to planar MOSFETs of the same voltage class. The device targets offline flyback converters, auxiliary power supplies, and LED drivers where low gate charge and fast switching are needed.
Conduction and switching parametrics
Gate charge totals 3.7 nC at 10 V, and input capacitance is 122 pF at 100 V drain-source — both low enough that a simple gate-drive IC or even a logic-level output can switch the device at moderate frequencies without excessive drive loss. Gate threshold voltage is specified at 5 V maximum with 100 µA drain current, so the device needs a gate drive above 5 V to fully enhance; the recommended drive voltage is 10 V for the rated Rds(on).
Through-hole mounting (TO-220) suits point-to-point wiring on perfboard or PCB through-hole layouts.