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STMicroelectronics STF46N60M6 — Discrete Semiconductors

STF46N60M6 N-Channel MOSFET, 600 V, 36 A, MDmesh M6

MPNSTF46N60M6
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STMicroelectronics STF46N60M6, MDmesh™ M6 Series, N-Channel MOSFET, 600 V Vdss, 36 A Id, 80 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55 to 150 °C.

$7.3700Ref. price · indicative, final on quote
STMicroelectronics STF46N60M6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF46N60M6 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation42W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs53.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2340 pF @ 100 V

Product details

600 V, 36 A N-channel MOSFET from ST's MDmesh M6 generation

The STF46N60M6 is a 600 V, 36 A N-channel power MOSFET from STMicroelectronics' MDmesh M6 series, housed in a fully isolated TO-220 Full Pack package. It targets high-efficiency switched-mode power supplies, power-factor-correction stages, and lighting ballasts where low conduction and switching losses matter. The M6 generation delivers a lower on-resistance and gate charge than earlier MDmesh families, which directly reduces heatsink size and improves light-load efficiency.

Gate charge is 53.5 nC at 10 V.

Package advantage: TO-220 Full Pack

That simplifies assembly and improves thermal coupling. The package is rated for 42 W power dissipation at the case, so a modest heatsink keeps the junction within the -55 to 150 °C operating range.

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