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STMicroelectronics STF45N65M5 — Discrete Semiconductors

STF45N65M5 N-Channel MOSFET, 650 V, 35 A, TO-220FP

MPNSTF45N65M5
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STMicroelectronics STF45N65M5, N-Channel MOSFET, MDmesh™ V, 650 V Vdss, 35 A Id, 78 mOhm Rds(on) at 10 V, 91 nC Qg, TO-220-3 Full Pack (TO-220FP), Through Hole.

$7.8500Ref. price · indicative, final on quote
STMicroelectronics STF45N65M5 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF45N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs78mOhm @ 19.5A, 10V
Gate charge (Qg) (Max) @ vgs91 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3375 pF @ 100 V

Product details

650 V N-channel in the isolated TO-220FP — what it brings to the switching supply

The STF45N65M5: Its 650 V drain-source rating and 35 A continuous drain current place it squarely in the offline power supply, PFC, and lighting ballast space.

The 40 W package limit from the TO-220FP means a heatsink is needed for continuous operation above a few amps.

TO-220 Full Pack — the isolated tab that saves an insulator

The TO-220-3 Full Pack (TO-220FP) is the fully isolated variant of the standard TO-220. The metal tab is encapsulated in the moulding compound, so the mounting surface is electrically isolated from the drain. The trade-off is higher thermal resistance junction-to-case compared to a standard TO-220, which is reflected in the 40 W dissipation ceiling. The through-hole mounting suits point-of-load stages on single-sided boards or where vibration resistance matters more than board density.

There is no last-time-buy notification or obsolescence risk on the near horizon. For a BOM that already qualifies this part, no urgency to re-spin or pre-buy exists — though stocking the line against a long forecast is always prudent for any discrete power device with a single-source wafer process.

Frequently asked questions

Can I replace STF45N65M5 with STF45N65M2?

The evidence does not carry parametric data for the STF45N65M2, so a direct comparison of Rds(on), gate charge, or switching performance cannot be made from this record. The MDmesh V designation on the STF45N65M5 identifies a specific super-junction generation; any substitution would require verifying voltage, current, on-resistance, gate charge, and package compatibility against the M2 datasheet. No official cross-reference is recorded here.