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STMicroelectronics STF45N10F7 — Discrete Semiconductors

STMicroelectronics STF45N10F7

MPNSTF45N10F7
Obsolete
$2.3000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STF45N10F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1640 pF @ 50 V