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STMicroelectronics STF43N60DM2 — Discrete Semiconductors

STF43N60DM2 MOSFET, N-Ch 600V 34A TO-220FP

MPNSTF43N60DM2
Active

STMicroelectronics MDmesh™ DM2 series, STF43N60DM2 N-channel MOSFET, 600 Vdss, 34 A Id, 93 mOhm Rds(on), TO-220-3 Full Pack, through-hole, tube.

$6.5400Ref. price · indicative, final on quote
STMicroelectronics STF43N60DM2 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF43N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs93mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2500 pF @ 100 V

Product details

600 V, 34 A power switch for primary-side and motor-drive stages

The STF43N60DM2: This puts it squarely in the primary-side switching position of a 300–400 W offline SMPS, or as the inverter leg in a fractional-horsepower motor drive. The TO-220FP full-pack package isolates the tab electrically, so no insulating pad or washer is needed between the device and the heatsink.

Gate charge and switching behaviour

A gate driver sourcing 1 A can charge the gate in roughly 56 ns, though the practical switching speed is limited by the input capacitance of 2500 pF at Vds = 100 V and the gate-drive loop inductance. The MDmesh DM2 series includes a fast-recovery body diode, which reduces reverse-recovery losses in bridge topologies like LLC resonant converters or phase-shifted full bridges.

Thermal and environmental ratings

The TO-220FP package's junction-to-case thermal resistance is specified through the 40 W power dissipation limit at Tc = 25°C — derate above that case temperature per the datasheet curve.

Frequently asked questions

What is the closest functional alternative — STFW40N60M2?

The STFW40N60M2 is a close parametric peer from the MDmesh II Plus series. Both are 600 V N-channel MOSFETs in through-hole packages with similar gate charge (57 nC vs 56 nC) and on-resistance (88 mOhm vs 93 mOhm). The STFW40N60M2 has a slightly lower gate threshold (4 V max vs 5 V) and higher power dissipation (63 W vs 40 W). They are not pin-for-pin identical — the STFW40N60M2 uses a TO-247 package, which has a different footprint and tab size than the TO-220FP. A board spin is required to swap between them.

What compliance documentation does STMicroelectronics provide for STF43N60DM2?

The part is ROHS3 compliant. STMicroelectronics provides a RoHS certificate of compliance and material declaration.