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STMicroelectronics STF42N60M2-EP — Discrete Semiconductors

STF42N60M2-EP MOSFET, N-Ch 600V 34A TO-220FP, 87mOhm

MPNSTF42N60M2-EP
Active

STMicroelectronics MDmesh M2-EP series, N-Channel MOSFET, 600 V Vdss, 34 A continuous drain current (Tc=25°C), 87 mOhm Rds(on) at 17 A and 10 V, 55 nC gate charge, TO-220 Full Pack through-hole package, 150°C junction temperature.

$6.8400Ref. price · indicative, final on quote
STMicroelectronics STF42N60M2-EP datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ M2-EP
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF42N60M2-EP specifications
ParameterValue
SeriesMDmesh™ M2-EP
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C34A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs87mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2370 pF @ 100 V

Product details

600 V, 34 A N-channel in an isolated TO-220FP

The STF42N60M2-EP is an N-channel 600 V, 34 A MOSFET in a TO-220 Full Pack (TO-220FP) through-hole package.

Conduction and switching: 87 mOhm Rds(on) and 55 nC gate charge

That figure is the one you size the heatsink for — at 17 A the conduction loss is about 25 W, which eats into the 40 W power dissipation ceiling of the TO-220FP package. The 55 nC total gate charge at 10 V is moderate for a 600 V, 34 A FET; a standard gate-driver IC can push through that charge in a few tens of nanoseconds, keeping switching losses manageable in hard-switched topologies up to the 100 kHz range.

Input capacitance Ciss is 2370 pF at 100 V drain-source. Gate charge Qg is 55 nC at 10 V.

Frequently asked questions

Can STF42N60M2-EP be used in a 400 V circuit?

Yes. The 600 V Vdss rating provides 200 V of headroom above a 400 V DC bus, which is standard margin for flyback, PFC, and half-bridge topologies operating from a 400 V rail.

What is the difference between STF42N60M2-EP and STF42N60M2?

The -EP suffix typically indicates an enhanced-performance variant within the MDmesh M2-EP series, often featuring improved switching behaviour or avalanche ruggedness. The base part STF42N60M2 shares the same 600 V / 34 A rating and TO-220FP package, but the -EP version is the recommended choice for new designs where lower Rds(on) or tighter parametric control is required. Verify the specific datasheet curves for your operating point.