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STMicroelectronics STF40N65M2 — Discrete Semiconductors

STF40N65M2 N-Channel MOSFET, 650 V, 32 A, MDmesh M2

MPNSTF40N65M2
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STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, TO-220-3 Full Pack, Through Hole, 650 V drain-source, 32 A continuous drain, 99 mOhm Rds(on) at 10 V, 56.5 nC gate charge, 25 W dissipation.

$3.2262Ref. price · indicative, final on quote
STMicroelectronics STF40N65M2 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF40N65M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation25W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs99mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs56.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2355 pF @ 100 V

Product details

The STF40N65M2 is an STMicroelectronics N-channel power MOSFET from the MDmesh™ M2 series, built on a planar technology that balances on-resistance and switching losses for hard-switched topologies. The TO-220FP full-pack package isolates the tab electrically, so no insulating pad or washer is needed against the heatsink — a BOM simplification for single-ended designs.

99 mOhm Rds(on) and 56.5 nC gate charge — sizing the drive and the heatsink

At 10 A load, expect roughly 9.9 W conduction loss at 25 °C junction; the 25 W package dissipation limit means the designer must derate for ambient temperature and switching losses.

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