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STMicroelectronics STF3NK100Z — Discrete Semiconductors

STF3NK100Z N-Ch MOSFET, 1000 V, 2.5 A, TO-220FP

MPNSTF3NK100Z
Active

STMicroelectronics SuperMESH™ N-Channel MOSFET, STF3NK100Z, 1000 V Vdss, 2.5 A Id, 6 Ohm Rds(on) @ 1.25 A, 10 V, TO-220-3 Full Pack (TO-220FP), Through Hole, -55°C to 150°C TJ.

$3.9300Ref. price · indicative, final on quote
STMicroelectronics STF3NK100Z datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STF3NK100Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1000 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs6Ohm @ 1.25A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds601 pF @ 25 V

Product details

What this 1 kV MOSFET brings to the board

The TO-220FP full-pack package isolates the tab electrically — no insulating pad needed against the heatsink, which saves assembly time in through-hole designs.

That keeps the driver's switching losses low and allows the part to be driven from a standard PWM controller without a separate gate-driver IC in many cases. For a 100 kHz flyback, this part switches cleanly without excessive ringing if the layout keeps the gate loop short.

Lifecycle and sourcing — still a current part

For a high-voltage MOSFET that fills a specific niche (1 kV in an isolated full-pack), having an active lifecycle removes the usual sourcing anxiety.

Frequently asked questions

What is the Rds(on) of STF3NK100Z?

The maximum on-resistance is 6 Ohms at a drain current of 1.25 A with a 10 V gate-to-source voltage. This is the figure to use for conduction loss calculations in a switching power supply.

STF3NK100Z vs STF3NK80Z: what's the difference?

The STF3NK100Z is rated for 1000 V drain-source voltage, while the STF3NK80Z is an 800 V part. Both are N-channel SuperMESH MOSFETs in the same TO-220FP package with similar current and on-resistance ratings. The 1000 V version gives extra voltage headroom for designs with high-voltage transients or where the input rail exceeds 600 V.