STMicroelectronics STF36N60M6, MDmesh M6 N-Channel MOSFET, 600 Vdss, 30 A Id, 99 mOhm Rds(on) at 15 A, 10 V gate drive, 44.3 nC Qg, TO-220 Full Pack (TO-220FP).
| Parameter | Value |
|---|---|
| Series | MDmesh™ M6 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 99mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1960 pF @ 100 V |
Rds(on) is 99 mOhm at 15 A, 10 V. The TO-220FP package is rated for 40 W dissipation.
Total gate charge is 44.3 nC at 10 V. Input capacitance is 1960 pF at 100 V drain-source.
Both are 600 V N-channel MOSFETs in the MDmesh family, but the M6 variant uses the sixth-generation MDmesh technology. The M6 typically offers lower Rds(on) and gate charge for the same die size compared to the M2 generation, which translates to lower conduction and switching losses. Pin-compatible in the same TO-220FP package, so a BOM swap is footprint-identical.