STMicroelectronics STF35N65M5, MDmesh™ V N-Channel MOSFET, 650 V Vdss, 27 A Id, 98 mOhm Rds(on) at 10 V, TO-220-3 Full Pack (TO-220FP), Through Hole.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 27A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 98mOhm @ 13.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 83 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3750 pF @ 100 V |
The 650 V Vdss covers the reflected voltage plus leakage spike in flyback converters. The 27 A continuous rating is the package-limited current at Tc = 25°C. Gate charge of 83 nC at 10 V is moderate.
STMicroelectronics lists the STF35N65M5 as Obsolete.
STMicroelectronics has not published an official successor order code for the STF35N65M5. A current-production MDmesh series part in the same TO-220FP package — such as an M5 or K5 generation device — may serve as a parametric replacement, but the designer must verify Rds(on), gate charge, and switching performance against the original application requirements.