The STF35N65DM2: N-channel 650 V MOSFET in the MDmesh DM2 series, rated 32 A continuous drain at 25 °C and 110 mOhm Rds(on) at 16 A, 10 V gate drive.
Gate charge and switching — 56.3 nC at 10 V
Gate charge is 56.3 nC at 10 V drive. Input capacitance is 2540 pF at 100 V drain bias.
Thermal and package — 40 W dissipation in a fully isolated tab
The TO-220FP (full-pack) case limits power dissipation to 40 W at case temperature, about half what a standard TO-220 with a metal tab can handle. That 40 W ceiling is the hard constraint for the thermal design: at 16 A and 110 mOhm, conduction loss alone is 28 W, leaving little headroom for switching loss. The isolated tab is a real advantage in production—no mica washer or thermal pad needed, which simplifies assembly and reduces thermal resistance to the heatsink.