600 V N-channel MOSFET in TO-220FP full-pack
The STMicroelectronics STF34NM60ND is a 600 V N-channel power MOSFET from the FDmesh™ II series, built on a strip-layout mesh structure that reduces on-resistance and switching losses.
Total gate charge (Qg) is 80.4 nC at a 10 V gate drive, with input capacitance Ciss of 2785 pF at 50 V drain-source. That gate charge figure tells you the driver current needed to hit your target switching speed — for a 1 A gate driver, expect roughly 80 ns rise time. The ±25 V maximum gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies like PFC or LLC converters.
Thermal limits and package advantage
Maximum power dissipation is 40 W at case temperature. The TO-220FP full-pack construction means the metal tab is fully encapsulated — no electrical connection to the drain. That simplifies heatsinking in designs where the heatsink is chassis-grounded or shared across multiple devices.