STMicroelectronics MDmesh™ II N-Channel MOSFET, 600 V Vdss, 31.5 A continuous drain, 105 mOhm Rds(on) at 14.5 A, 10 V gate drive, TO-220 Full Pack through-hole package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 31.5A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 105mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 84 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2722 pF @ 100 V |
Housed in a TO-220 Full Pack (TO-220FP) through-hole package, the STF34NM60N has a fully isolated tab — no insulating pad or washer needed between the device and the heatsink. Maximum power dissipation is 40 W at case temperature.
The device requires a 10 V gate drive to achieve the specified minimum on-resistance.
The evidence does not list an official replacement. For a pin-compatible alternative, evaluate the STP34N60M2 (same MDmesh II family, similar ratings) — confirm pinout and thermal performance in your application.