600 V, 125 mOhm — sizing the conduction loss
The 125 mOhm Rds(on) at 10 V gate drive sets the conduction loss floor — at 12.5 A the drop is about 1.56 V, which at 35 W package dissipation limits the safe operating area in through-hole designs.
Total gate charge is 33.4 nC at 10 V, with input capacitance Ciss of 1515 pF at 100 V drain bias. A typical gate driver delivering 1 A peak can charge the gate in about 33 ns — fast enough for 100 kHz hard-switched converters, but the 35 W package limit means the thermal impedance of the heatsink, not the die, will set the practical switching frequency ceiling. The gate threshold voltage maximum is 4.75 V at 250 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on); 5 V logic-level drive will not fully enhance the channel.